?2007 fairchild semiconductor corporation FFP30S60S rev.c0 tm FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com 1 absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 103 o c 30 a i fsm non-repetitive peak surge current 60hz single half-sine wave 300 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating units r jc maximum thermal resistance, junction to case 1.1 o c/w device marking device package reel size tape width quantity f30s60s FFP30S60Stu to-220-2l - - 50 1. cathode 2. anode 1. cathode 2. anode to - 220-2l pin assigments FFP30S60S features ? stealth recovery t rr = 40 ns (@ i f = 30 a) ? max forward voltage, v f = 2.6 v (@ t c = 25c) ? 600v reverse voltage and high reliability applications ? general purpose ? switching mode power supply ? boost diode in continuous mode power factor corrections ? power switching circuits 30 a, 600 v, stealth? ii diode the FFP30S60S is a stealth? ii diode with soft recovery characteristics. it is silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. october 2007 ? avalanche energy rated ? rohs compliant
FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 30 a i f = 30 a t c = 25 o c t c = 125 o c - - 2.1 1.6 2.6 - v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i f = 1 a, di/dt = 100 a/s, v r = 30 v t c = 25 o c - 25 35 ns t rr i rr s factor q rr i f = 30 a, di/dt = 200 a/s, v r = 390 v t c = 25 o c - - - - 28 2.4 0.9 34 40 - - - ns a nc t rr i rr s factor q rr i f = 30 a, di/dt = 200 a/s, v r = 390 v t c = 125 o c - - - - 75 6.3 0.9 236 - - - - ns a nc w avl avalan che energy ( l = 40 mh) 20 - - mj test circuit and w aveforms notes: 1: pulse: test pu lse width = 300 s, duty cycle = 2% ?200 7 fairchild semicond uctor corporation FFP30S60S rev.c0
FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/d t figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 012345 1 10 100 75 o c t c = 125 o c forward cu r rent, i f [a] forwar d vol tage, v f [v] 25 o c 200 100 20 0 300 400 500 600 0.01 0.1 1 10 100 1000 t c = 125 o c t c = 25 o c t c = 75 o c reverse cu r rent , i r [ a ] reve r se voltage, v r [v] 10 0.1 1 10 1 0 0 0 70 140 210 280 350 typi cal capacitance at 0v = 271 pf ca pa c itances , cj [pf] re v erse voltage, v r [v] 100 150 200 250 300 20 40 60 80 100 t c = 75 o c t c = 25 o c t c = 12 5 o c reverse rec o very time, t rr [ns] di/d t [ a/ s ] 25 5 0 75 100 125 150 0 10 20 30 40 50 60 70 avera g e forward current, i f( a v ) [a] c ase t e mperature, t c [ o c ] 100 15 0 200 250 300 0 2 4 6 8 10 t c = 125 o c t c = 25 o c t c = 75 o c reve r se recovery current, i rr [a] di/d t [ a/ s ] ?2007 fairchild semiconductor corpo ration FFP30S60S rev.c0
4 FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com typical performance characteristics figure 7. normalized maximum transient thermal impedance t, re ctangular pulse duration (s) 10-5 10-2 10-1 z ja , normal iz ed thermal impedance 0.01 10-4 1 0-3 single pulse 100 0.1 101 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 note s: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0 ?2007
5 FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com mechanical dimensions dimensions in millimeters to-220-2l ?200 7 fairchild semicond uctor corporation FFP30S60S rev.c0
FFP30S60S 30 a, 600 v, stealth? ii diode www.fairchildsemi.com 6 ? 2007 fairc hild semiconductor corporati on FFP30S60S rev.c0
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